JPH03129741A - Ｍｏｓ型半導体装置の製造方法 - Google Patents
Ｍｏｓ型半導体装置の製造方法Info
- Publication number
- JPH03129741A JPH03129741A JP20610090A JP20610090A JPH03129741A JP H03129741 A JPH03129741 A JP H03129741A JP 20610090 A JP20610090 A JP 20610090A JP 20610090 A JP20610090 A JP 20610090A JP H03129741 A JPH03129741 A JP H03129741A
- Authority
- JP
- Japan
- Prior art keywords
- gate
- insulating film
- film
- pattern
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 12
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000000034 method Methods 0.000 claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 10
- 238000000151 deposition Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 47
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 14
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052785 arsenic Inorganic materials 0.000 abstract description 5
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 5
- 229910052698 phosphorus Inorganic materials 0.000 abstract description 5
- 239000011574 phosphorus Substances 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 3
- 229910052710 silicon Inorganic materials 0.000 abstract description 3
- 239000010703 silicon Substances 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- 238000001312 dry etching Methods 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052787 antimony Inorganic materials 0.000 description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 238000000927 vapour-phase epitaxy Methods 0.000 description 2
- 238000001947 vapour-phase growth Methods 0.000 description 2
- 206010011732 Cyst Diseases 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 208000031513 cyst Diseases 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-N hydrofluoric acid Substances F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20610090A JPH03129741A (ja) | 1977-09-14 | 1990-08-02 | Ｍｏｓ型半導体装置の製造方法 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11072477A JPS5444482A (en) | 1977-09-14 | 1977-09-14 | Mos type semiconductor device and its manufacture |
| JP20610090A JPH03129741A (ja) | 1977-09-14 | 1990-08-02 | Ｍｏｓ型半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11072477A Division JPS5444482A (en) | 1977-09-14 | 1977-09-14 | Mos type semiconductor device and its manufacture |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH03129741A true JPH03129741A (ja) | 1991-06-03 |
| JPH0465531B2 JPH0465531B2 (en]) | 1992-10-20 |
Family
ID=26450280
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20610090A Granted JPH03129741A (ja) | 1977-09-14 | 1990-08-02 | Ｍｏｓ型半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03129741A (en]) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003509861A (ja) * | 1999-09-17 | 2003-03-11 | テレフオンアクチーボラゲツト エル エム エリクソン | 半導体装置の隔離のため浅いトレンチ内に深いトレンチを形成するための自己整合方法 |
-
1990
- 1990-08-02 JP JP20610090A patent/JPH03129741A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003509861A (ja) * | 1999-09-17 | 2003-03-11 | テレフオンアクチーボラゲツト エル エム エリクソン | 半導体装置の隔離のため浅いトレンチ内に深いトレンチを形成するための自己整合方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0465531B2 (en]) | 1992-10-20 |
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